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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 2SD880 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO--220 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25) Collector current 3A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) VBE f T 123 unless otherwise specified) Test conditions MIN 60 60 7 100 100 60 300 1 1 3 70 0.8 IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20s 1.5 0.8 V V MHz TYP MAX UNIT V V V A A Ic=100A, IE=0 Ic=50mA, IB=0 IE= 100A, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=5V, IC=500mA IC=3A, IB=300mA IC=0.5A, VCE= 5V VCE=5 V, IC=500mA VCE=10V, IE=0, f=1MHz Collector output capacitance Turn on time Storage time Fall time Cob ton ts t f pF s s s CLASSIFICATION OF hFE Rank Range O 60-120 Y 100-200 GR 150-300 |
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